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Odd triplet pairing effects induced by interface spin-flip scatterings: critical temperature of superconductor/ferromagnet bilayers

机译:界面自旋翻转散射引起的奇数三重态配对效应:   超导体/铁磁体双层的临界温度

摘要

The superconducting critical temperature $T_C$ of asuperconductor/ferromagnet (S/F) bilayer with spin-flip scatterings at theinterface is calculated as a function of the ferromagnet thickness $d_F$ in thedirty limit employing the Usadel equation. The appropriate boundary conditionsfrom the spin-flip scatterings at the S/F interface are derived for the Usadelequation which includes the spin triplet pairing components as well as the spinsinglet one. The spin-flip processes induce the spin triplet pairing componentswith s-wave in momentum and odd symmetry in frequency from the s-wave singletorder parameter $\Delta$ of the superconductor region. The induced tripletcomponents alter the singlet order parameter in the superconductor throughboundary conditions at the interface and, consequently, change the $T_C$ of anS/F bilayer system. The calculated $T_C(d_F)$, like the case of no spin-flips,shows non-monotonic behavior which typically decreases as $d_F$ is increasedfrom 0 and shows a shallow minimum and then saturates slowly as $d_F$ isfurther increased. It is well established that as the interface resistance(parameterized in terms of $\gamma_b$) is increased, the $T_C$ is increased fora given $d_F$ and the non-monotonic feature in $T_C(d_F)$ is stronglysuppressed. As the spin flip scattering (parameterized in terms of $\gamma_m$)is increased, on the other hand, the $T_C$ is also increased for a given $d_F$,but the non-monotonic feature in $T_C(d_F)$ is less suppressed or evenenhanced, through the formation of the spin triplet components.
机译:使用Usadel方程,计算了在肮脏极限内铁磁体厚度$ d_F $的函数,计算出在界面处具有自旋翻转散射的超导体/铁磁体(S / F)双层的超导临界温度$ T_C $。从S / F界面处的自旋翻转散射中得出适当的边界条件,用于Usadelequation,其中包括自旋三重态对分量以及自旋小数对。自旋翻转过程根据超导体区域的s波单阶参数$ \ Delta $诱导出动量为s波且频率为奇数对称的自旋三重态配对分量。诱导的三重态组分改变了超导体在界面处的边界条件下的单重态阶跃参数,并因此改变了S / F双层系统的$ T_C $。像没有自旋翻转的情况一样,计算得出的$ T_C(d_F)$显示非单调行为,通常随着$ d_F $从0增加而减小,并显示出一个浅的最小值,然后随着$ d_F $进一步增加而缓慢饱和。公认的是,随着界面电阻(用$ \ gamma_b $参数化)增加,给定$ d_F $时,$ T_C $会增加,而在$ T_C(d_F)$中的非单调特征会受到强烈抑制。另一方面,随着自旋翻转散射(根据$ \ gamma_m $参数化)的增加,对于给定的$ d_F $,$ T_C $也会增加,但在$ T_C(d_F)$中非单调特征通过形成自旋三重态组分,其被抑制或增强得更少。

著录项

  • 作者

    Doh, Hyeonjin; Choi, Han-Yong;

  • 作者单位
  • 年度 2004
  • 总页数
  • 原文格式 PDF
  • 正文语种 {"code":"en","name":"English","id":9}
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